DS1230Y-100 datasheet download check from
http://www.chinaicmart.com/series-DS1/DS1230Y-100.html
FEATURES
10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is
applied for the first time
Full ±10% VCC operating range (DS1230Y)
Optional ±5% VCC operating range (DS1230AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver
DESCRIPTION
The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as
32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.